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Description:

The LM114 is a kind of monolithic dual NPN general purpose amplifier. The device contains a pair of junction-isolated NPN transistors fabricated on a single silicon substrate. This monolithic structure makes possible extremely tight parameter matching at low cost. Further, advanced processing techniques yield exceptionally high current gains at low collector currents, virtual elimination of "propcom noise", low leakages and improved long-term stability.

There are some features as follows: (1)low offset voltage; (2)low drift; (3)high current gain; (4)tight beta match; (5)high breakdown voltage; (6)matching guaranteed over a 0 to 5 V collector-base voltage range; (7)CMRR＞100 dB.

The following is about the absolute maximum ratings (TA=25℃ unless otherwise noted): (1)collector-base voltage: 45 V; (2)collector-emitter voltage: 45 V; (3)collector-collector voltage: 45 V; (4)emitter-base voltage: 6 V; (5)collector current: 20 mA; (6)storage temperature range: -65 to +200℃; (7)operating temperature range: -55 to +200℃; (8)lead temperature (soldering, 10 sec): +300℃; (9)power dissipation (TC=25℃): 800 mW.